Patterned Growth of Nanoscale In Clusters on the Si(111)-7×7 and Si(111)-Ge(5×5) Reconstructions
نویسندگان
چکیده
منابع مشابه
Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si111 surface.
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter approximately 2 nm and periodicity 2.7 nm in the very narrow range of growth temperature...
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چکیده ندارد.
15 صفحه اولDensity functional theory study of the geometry, energetics, and reconstruction process of Si111 surfaces.
We report the structures and energies from first principles density functional calculations of 12 different reconstructed (111) surfaces of silicon, including the 3x3 to 9x9 dimer-adatom-stacking fault (DAS) structures. These calculations used the Perdew-Burke-Ernzerhof generalized gradient approximation of density functional theory and Gaussian basis functions. We considered fully periodic sla...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2007
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/61/1/160